MF095000 - SEMI MF950 - Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching Revision:SEMI MF950-1107 (Reapproved 1023) - Current integrated circuits

integrated circuits

SEMI E148-0309 (technical revision)

• To establish performance criteria when purchasing ultrapure water (UPW) purification equipment

本スタンダードは，global Facilities Technical Committeeで技術的に承認されている。現版は2012年6月18日，global Audits and Reviews Subcommitteeにて発行が承認された。2012年8月にwww

MF095000 - SEMI MF950 - Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching Revision:SEMI MF950-1107 (Reapproved 1023) - Current integrated circuitsThis Test Method covers a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat treatment of the wafer. Such damage results from mechanical surface treatments such as sawing, lapping, grinding, sandblasting, and shot peening. The damage is revealed by a preferential etch that removes silicon in the region of the deformation. Preferential etching occurs because the chemical potential in the region of