MF152800 - SEMI MF1528 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry Revision:SEMI MF1528-0413 (Reapproved 0824) - Current SEMI MF1528-0413 (Reapproved 0824)

SEMI MF1528-0413 (Reapproved 0824)

The results of the test will also be useful in the comparison of MFCs

SEMI MF1569 –– Guide for Generation of Consensus Reference Materials for Semiconductor Technology

ISO 11462] in order to obtain reliable

MF152800 - SEMI MF1528 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry Revision:SEMI MF1528-0413 (Reapproved 0824) - Current SEMI MF1528-0413 (Reapproved 0824)1 Purpose 1. 1 Frequently it is essential to control the boron level in heavily doped n type substrates used to make epitaxial wafers because the boron contamination can result in autodoping at the epitaxial silicon substrate interface. 1. 2 SIMS can measure the boron contamination in heavily doped n type substrates. 1. 3 This Test Method can be used for process control, research and development, and materials acceptance purposes. 2 Scope 2. 1 This